Circuit and method for spin-torque mram bit line and source line voltage regulation

ABSTRACT

Circuitry and a method for regulating voltages applied to magnetoresistive bit cells of a spin-torque magnetoresistive random access memory (ST-MRAM) reduces time-dependent dielectric breakdown stress of the word line transistors. During a read or write operation, only the ends of the selected bit cells are pulled down to a low voltage and/or pulled up to a high voltage depending on the operation (write  0 , write  1 , and read) being performed. The ends of the unselected bit cells are held at a precharge voltage while separately timed signals pull up or pull down the ends of the selected bit cells during read and write operations.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/720,183, filed Dec. 19, 2012 (still pending). This application andU.S. patent application Ser. No. 13/720,183 claim priority to and thebenefit of U.S. Provisional Application No. 61/578,092, filed Dec. 20,2011. The contents of U.S. patent application Ser. No. 13/720,183 andU.S. Provisional Application No. 61/578,092 are incorporated byreference herein in their entirety.

TECHNICAL FIELD

The exemplary embodiments described herein generally relate to aspin-torque MRAM and more particularly to bit line and source linevoltage regulation when writing to and reading from a spin-torque MRAM.

BACKGROUND

Magnetoelectronic devices, spin electronic devices, and spintronicdevices are synonymous terms for devices that make use of effectspredominantly caused by electron spin. Magnetoelectronics are used innumerous information devices to provide non-volatile, reliable,radiation resistant, and high-density data storage and retrieval. Thenumerous magnetoelectronics information devices include, but are notlimited to, Magnetoresistive Random Access Memory (MRAM), magneticsensors, and read/write heads for disk drives.

Typically an MRAM includes an array of magnetoresistive memory elements.Each magnetoresistive memory element typically has a structure thatincludes multiple magnetic layers separated by various non-magneticlayers, such as a magnetic tunnel junction (MTJ), and exhibits anelectrical resistance that depends on the magnetic state of the device.Information is stored as directions of magnetization vectors in themagnetic layers. Magnetization vectors in one magnetic layer aremagnetically fixed or pinned, while the magnetization direction ofanother magnetic layer may be free to switch between the same andopposite directions that are called “parallel” and “antiparallel”states, respectively. Corresponding to the parallel and antiparallelmagnetic states, the magnetic memory element has low (logic “0” state)and high (logic “1” state) electrical resistance states, respectively.Accordingly, a detection of the resistance allows a magnetoresistivememory element, such as an MTJ device, to provide information stored inthe magnetic memory element. A high magnetoresistance (MR) value, whichis the ratio of the resistance difference of the two states to the lowresistance state, is desirable for increasing sensing signal and fastread operation.

There are two completely different methods used to program the freelayer: field switching and spin-torque switching. In field-switchedMRAM, current carrying lines adjacent to the MTJ bit are used togenerate magnetic fields that act on the free layer. In spin-torqueMRAM, switching is accomplished with a current pulse through the MTJitself. The angular momentum carried by the spin-polarized tunnelingcurrent causes reversal of the free layer, with the final state(parallel or antiparallel) determined by the polarity of the currentpulse. A reset current pulse will cause the final state to be parallelor logic “0”. A set current pulse, in the opposite polarity of resetcurrent pulse, will cause the final state to be antiparallel or logic“1”. Spin-torque transfer is known to occur in MTJ devices and giantmagnetoresistance devices that are patterned or otherwise arranged sothat the current flows substantially perpendicular to the interfaces,and in simple wire-like structures when the current flows substantiallyperpendicular to a domain wall. Any such structure that exhibitsmagnetoresistance has the potential to be a spin-torque magnetoresistivememory element.

Spin-torque MRAM (ST-MRAM), also known as spin-transfer torque RAM(STT-RAM), is an emerging memory technology with the potential fornon-volatility with unlimited endurance and fast write speeds at muchhigher density than field-switched MRAM. Since ST-MRAM switching currentrequirements reduce with decreasing MTJ dimensions, ST-MRAM has thepotential to scale nicely at even the most advanced technology nodes.However, increasing variability in MTJ resistance and sustainingrelatively high switching currents through bit cell select devices inboth current directions can limit the scalability of ST-MRAM. The writecurrent is typically higher in one direction compared to the other, sothe select device must be capable of passing the larger of the twocurrents. In addition, ST-MRAM switching current requirements increaseas the write current pulse duration is reduced. Because of this, thesmallest ST-MRAM bitcell approach may require relatively long switchingtimes.

The conventional scheme for programming spin-torque MRAM is to apply asingle current or voltage pulse to the memory cells to reverse thedirection of their storage layer. The duration of the pulse is set bydesign requirements such as memory interface specifications. Generally,the write operation has to be completed in less than 50 ns. The writevoltage amplitude is set to meet the memory write error rate (WER) andlifetime requirements. It has to be greater than a certain value Vw toassure that all bits are programmed reliably, with a write error ratebelow a defined value WER₀. For megabit memories, WER₀ is typically lessthan 10⁻⁸. The write voltage amplitude also has to be low enough toassure long-term device integrity. For magnetic tunnel junctions,elevated write voltage reduces the memory lifetime because of dielectricbreakdown. In some cases, it is not possible to find a write voltagethat meets the desired write error rate WER₀ and the required lifetime.Known solutions to improve the write error rate are adding one orseveral layers of error correction or using multiple write pulses.

An ST-MRAM array includes a plurality of core strips, with each corestrip including a bit cell array comprising a plurality of columns ofbit cells (a magnetic tunnel junction and a word line selecttransistor). In a column of ST-MRAM bit cells, only one row is selectedfor reading or writing with a positive voltage at the gate (controlelectrode) of the word line select transistor.

In a column of bit cells, a first end of the magnetic tunnel junctionsis connected to a first common line referred to as bit line. The secondend of the magnetic tunnel junctions connects to the first currentcarrying electrode of their respective word line select transistor. Thesecond current carrying electrodes of the word line select transistorsare connected to a second common line referred to as source line. Due toa large number, for example 512 or 1024, of bit cells in a column, bitand source lines are long metal routes that can have significantresistance. When writing a bit far away from either the top or bottomend of a column using a write driver, current through the bit and sourcelines causes voltage drop due to line resistance reducing the appliedvoltage across the magnetic tunnel junction.

It is desirable to reduce effective resistance of all the components,for example metal resistance and word line select device resistance, inthe path during reading from or writing to a selected bit cell byapplying different voltages at its bit line and source line. In order toreduce the resistance from the word line select device, the gate(control electrode) can be charge pumped to a higher voltage than thesupply voltage. However, the pumped word line gate voltage raises thepossibility of time dependent dielectric breakdown (TDDB). One knowncircuit (see U.S. Pat. No. 7,190,612) discloses a NAND gate output goingto an inverter and controls two switches, for example, one switchconnecting the bit line or source line to a first reference voltage anda second switch connecting the bit line or source line to a secondreference voltage. However, this known patent teaches the voltageapplications being controlled by the same timing signal. Pumped wordline voltages may cause reliability problems in such an implementation.

Another circuit (see U.S. Patent Publication Number 2010/0110775A1)describes pumped word line voltages, and separate switches for read,write with set current pulse, and write with reset current pulse.However, there is no disclosure of timing control for write and readswitches, and the pumped word line voltages can cause reliabilityproblems.

Accordingly, circuitry for sense amplifiers, write drivers, and columnselection is needed that provides a higher write voltage across themagnetic tunnel junction during write and higher effective MR duringread, while avoiding time dependent dielectric breakdown (TDDB) stressof the word line select devices in the selected row. Furthermore, otherdesirable features and characteristics of the exemplary embodiments willbecome apparent from the subsequent detailed description and theappended claims, taken in conjunction with the accompanying drawings andthe foregoing technical field and background.

BRIEF SUMMARY

Circuitry and a method for regulating voltages applied to source and bitlines of a spin-torque magnetoresistive random access memory areprovided.

A first exemplary embodiment is a method for writing to and reading froma spin-torque MRAM having a first source line, a second source line, afirst bit line, a second bit line, a first plurality of magnetic tunneljunction cells coupled between the first source line and the first bitline, and a second plurality of magnetic tunnel junction cells coupledbetween the second source line and the second bit line, comprisingapplying a first voltage to the first source line or the first bit line;and subsequently applying a second voltage to the other of the firstsource line or the first bit line from which the first voltage isapplied.

A second exemplary embodiment is a method for writing to and readingfrom a spin-torque MRAM having a first source line, a second sourceline, a first bit line, a second bit line, each of a first plurality ofmagnetic tunnel junction cells coupled in series with one each of aplurality of word line select transistors between the first source lineand the first bit line, and a second plurality of magnetic tunneljunction cells coupled in series with one each of a second plurality ofword line select transistors between the second source line and thesecond bit line, comprising applying a first voltage at each of thefirst source line, first bit line, second source line, and second bitline; applying a word line voltage to one word line select transistor ofeach first and second pluralities of word line select transistors;isolating the first source line and first bit line from the firstvoltage; applying a second voltage at one of the first bit line or firstsource line; applying a third voltage at the other of the first bit lineor first source line at which the second voltage is applied; isolatingthe third voltage from the first bit line or first source line at whichit was applied; isolating the second voltage from the first bit line orfirst source line at which it was applied; and reapplying the firstvoltage at each of the first source line and second source line.

A third exemplary embodiment is a spin-torque MRAM, comprising a firstsource line; a second source line; a first bit line; a second bit line;a first plurality of first magnetic bit cells each coupled between thefirst source line and the first bit line; a second plurality of secondmagnetic bit cells each coupled between the second source line and thesecond bit line; a word line driver configured to selectively activateone of the first magnetic bit cells and one of the second magnetic bitcells; a column selection circuit coupled to each of the first andsecond source lines and the first and second bit lines and configured toapply a precharge voltage to the first and second source lines and thefirst and second bit lines; sense amplifiers and write drivers circuitrycoupled to the column selection circuitry; and column circuit driverscircuitry coupled to the sense amplifiers and write drivers circuitryand the column selection circuitry.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will hereinafter be described in conjunction withthe following drawing figures, wherein like numerals denote likeelements, and

FIG. 1 is a partial general circuit diagram of an ST-MRAM in accordancewith a first exemplary embodiment;

FIGS. 2A-2D are a more detailed partial circuit diagram in accordancewith a second exemplary embodiment;

FIG. 3 is a timing diagram describing the operation of reading data fromthe second exemplary embodiment;

FIG. 4 is a timing diagram describing the operation of writing a firststate to the second exemplary embodiment;

FIG. 5 is a timing diagram describing the operation of writing a secondstate to the second exemplary embodiment;

FIG. 6 is a flow chart of a method of reading and writing an ST-MRAM inaccordance with the first exemplary embodiment; and

FIG. 7 is a flow chart of a method of reading and writing an ST-MRAM inaccordance with the second exemplary embodiment.

DETAILED DESCRIPTION

The following detailed description is merely illustrative in nature andis not intended to limit the embodiments of the subject matter or theapplication and uses of such embodiments. Any implementation describedherein as exemplary is not necessarily to be construed as preferred oradvantageous over other implementations. Furthermore, there is nointention to be bound by any expressed or implied theory presented inthe preceding technical field, background, brief summary, or thefollowing detailed description.

A spin-torque magnetoresistive random access memory (ST-MRAM) arraycomprises of a plurality of magnetic tunnel junctions, each coupled to aword line select transistor connected to each of a plurality of sourcelines and bit lines. All the bit lines and source lines are elevated toa higher than ground voltage (vbq) upon power up and are maintained atvbq in a steady state. During a read or write operation, only theselected (an addressed subset of all) bit lines and source lines arepulled-down to a low voltage and/or pulled-up to a high voltagedepending on the operation (write 0, write 1, and read) being performed.The word line select transistor gate or control electrode voltage is acharge pumped voltage the magnitude of which is determined by thepulled-down or pulled-up voltages at the selected bit lines and sourcelines to avoid time dependent dielectric breakdown stress of the wordline select transistors in the selected bit lines and source lines. Theunselected bit lines and source lines are held at the vbq voltage level.The magnitude of the vbq voltage is determined by the magnitude of theword line select transistor gate or control electrode voltage to avoidtime dependent dielectric breakdown stress of the word line selecttransistors in the unselected bit lines and source lines. Separatelytimed switch control signals and a logic circuit are used for pull-up orpull-down of the selected bit lines and source lines during read andwrite operations. A method of operation further includes delayingpull-down timing from pull-up timing by a fixed or programmable delay.During power-up and steady state, all the bit lines and source lines areprecharged to a vbq voltage level with a precharge transistor on eachside of the column selection transistors for each bit line and sourceline. In response to a read or write operation, the vbq prechargetransistor of the selected column at the current carrying electrode ofcolumn selection transistors not connected to the bit line or sourceline is disabled subsequent to (by a fixed or programmable delay) theprecharge transistor of the selected column at the other currentcarrying electrode connected to the bit line or source line. Columnselection transistors are placed at both the top and bottom sides of thearray

Terms of enumeration such as “first,” “second,” “third,” and the likemay be used for distinguishing between similar elements and notnecessarily for describing a particular spatial or chronological order.These terms, so used, are interchangeable under appropriatecircumstances. The embodiments of the invention described herein are,for example, capable of use in sequences other than those illustrated orotherwise described herein.

The terms “comprise,” “include,” “have” and any variations thereof areused synonymously to denote non-exclusive inclusion. The term“exemplary” is used in the sense of “example,” rather than “ideal.”

In the interest of conciseness, conventional techniques, structures, andprinciples known by those skilled in the art may not be describedherein, including, for example, standard magnetic random access memory(MRAM) process techniques, fundamental principles of magnetism, andbasic operational principles of memory devices.

During the course of this description, like numbers are used to identifylike elements according to the different figures that illustrate thevarious exemplary embodiments.

An MRAM array includes write drivers and sense-amplifiers positionednear a plurality of magnetoresistive bits. A write, or program,operation begins when a current of either one of the two different andopposite polarities, set or reset, is applied through the magneticstorage element, e.g., magnetic tunnel junction (MTJ). Such writemechanism is employed in spin-transfer torque (STT) or spin torque (ST)MRAM. The spin-torque effect is known to those skilled in the art.Briefly, a current becomes spin-polarized after the electrons passthrough the first magnetic layer in a magnetic/non-magnetic/magnetictri-layer structure, where the first magnetic layer is substantiallymore magnetically stable than the second magnetic layer. The highermagnetic stability of the first layer compared to the second layer maybe determined by one or more of several factors including: a largermagnetic moment due to thickness or magnetization, coupling to anadjacent antiferromagnetic layer, coupling to another ferromagneticlayer as in a synthetic antiferromagnetic (SAF) structure, or a highmagnetic anisotropy. The spin-polarized electrons cross the nonmagneticspacer and then, through conservation of spin angular momentum, exert aspin torque on the second magnetic layer that causes precession of itsmagnetic moment and switching to a different stable magnetic state ifthe current is in the proper direction. When net current ofspin-polarized electrons moving from the first layer to the second layerexceeds a first critical current value, the second layer will switch itsmagnetic orientation to be parallel to that of the first layer. If abias of the opposite polarity is applied, the net flow of electrons fromthe second layer to the first layer will switch the magnetic orientationof the second layer to be antiparallel to that of the first layer,provided the magnitude of the current is above a second critical currentvalue. Switching in this reverse direction involves a fraction of theelectrons reflecting from the interface between the spacer and the firstmagnetic layer and traveling back across the nonmagnetic spacer tointeracting with the second magnetic layer.

FIG. 1 is a partial schematic diagram of an ST-MRAM array 100 inaccordance with the exemplary embodiment. An ST-MRAM bit cell array 102is coupled to first and second column selection circuitry 104, 106 andto word line circuitry 108. First and second sense amplifiers and writedrivers circuitry 112, 114 are coupled to the first and second columnselection circuitry 104, 106, respectively. First column circuit driverscircuitry 116 is coupled to the first column selection circuitry 104 andthe first sense amplifiers and write drivers circuitry 112. Secondcolumn circuit drivers circuitry 118 is coupled to the second columnselection circuitry 106 and the second sense amplifiers and writedrivers circuitry 114. The write drivers operate to write data to thebit cell array 102 and the sense amplifier operates by reading data fromthe array 102. For simplicity and brevity, other known circuit blocks ina memory, such as data storage latches, address decoders, and timingcircuitry, are not shown in FIG. 1.

The ST-MRAM array 100 includes a plurality of columns 122 with eachcolumn including a plurality of magnetic bit cells 126. Each magneticbit cell 126 includes a magnetic tunnel junction device 128 and a wordline select transistor 130. Within each column 122, each magnetic tunneljunction device 128 is coupled between a bit line 132, 133 and a firstelectrode of a word line select transistor 130, while a second electrodeof each word line select transistor 130 is coupled to a source line 134,135. A control electrode of each word line select transistor 130 iscoupled to a voltage word line 136 within the word line circuitry 108.Each one of the voltage word lines 136 is coupled to a single row ofword line select transistors. The word line select transistor 130preferably is a thin-oxide device with low threshold voltage for ahigher current drive capability.

The first exemplary embodiment described above provides voltages at bothends of each source lines 134, 135, while alternating adjacent bit lines132, 133 are coupled, one at a first end and the other at the opposedsecond end. The source line resistance is one fourth of the resistanceof an array connected only at one end of the source line, which leads toa higher write voltage and higher effective MR during read. Word linecircuitry 108 comprises word line drivers that may provide a chargepumped voltage on word line 136. The charge pumped word line voltagereduces the resistance of the word line select transistor 130.

FIGS. 2A, 2B, 2C, and 2D are a more detailed circuit diagram of theST-MRAM 100 in accordance with a second exemplary embodiment. It shouldbe noted that all components of this exemplary embodiment as illustratedin FIGS. 2A, 2B, 2C, and 2D that are similar to components of theexemplary embodiment of FIG. 1 are designated with like numbers.Referring first to FIG. 2A, NAND gates 201, 202, 203 each have a firstinput coupled to receive a first data input signal din[a], and a secondinput coupled to receive a source line enable read signal enrd_sl, asource line enable write 0 signal enwr0_sl, and a source line enablewrite 1 signal enwr1_sl, respectively. An inverter 204 has an inputcoupled to receive an output of the NAND gate 201 and provides a firstenable read low signal enrd_lo[a]. An inverter 205 has an input coupledto receive an output of the NAND gate 202 and provides a first enablewrite 0 low signal enwr0_lo[a]. An output of the NAND gate 203 providesa first enable write 1 high signal enwr1_hi_b[a].

NAND gates 206, 207, 208 each have a first input coupled to receive asecond data input signal din[b], and a second input coupled to receivethe source line enable read signal enrd_sl, the source line enable write0 signal enwr0_sl, and the source line enable write 1 signal enwr1_sl,respectively. An inverter 209 has an input coupled to receive an outputof the NAND gate 206 and provides a second enable read low signalenrd_lo[b]. An inverter 210 has an input coupled to receive an output ofthe NAND gate 207 and provides a second enable write 0 low signalenwr0_lo[b]. An output of the NAND gate 208 provides a second enablewrite 1 high signal enwr1_hi_b[b]. Note that the first and second datainput signals din[a] and din[b] can represent two bits from a data inputbus din.

Referring to FIG. 2B, the sense amplifiers and write drivers circuitry112 of the second embodiment includes a transistor 212 having a firstcurrent carrying electrode connected to a read voltage regulator 213 forreceiving a read voltage, a second current carrying electrode coupled toa node 211, and a control electrode coupled to receive the signalenrd_lo[a]. A transistor 214 has a first current carrying electrodecoupled to a write 0 voltage regulator 215 for receiving a write 0voltage, a second current carrying electrode coupled to the node 211,and a control electrode coupled to receive the signal enwr0_lo[a]. Atransistor 216 has a first current carrying electrode coupled to a write1 voltage regulator 217 for receiving a write 1 voltage, a secondcurrent carrying electrode coupled to node 211, and a control electrodecoupled to receive the signal enwr1_hi_b[a].

The above portion of the sense amplifiers and write drivers circuitry112 is coupled to the source line 134 by a portion of the columnselection circuitry 104 including a column selection transistor 218having a first current carrying electrode coupled to the node 211 and asecond current carrying electrode coupled to source line 134. The columnselection transistor 218 preferably is a thin-oxide device with lowthreshold voltage for a higher current drive. A transistor 219 has afirst current carrying electrode coupled to receive a precharge voltagevbq, a second current carrying electrode coupled to node 211, and acontrol electrode coupled to receive a delayed bit line precharge signaldlyblspq. A transistor 220 has a first current carrying electrodecoupled to the control electrode of column selection transistor 218, asecond current carrying electrode coupled to a reference voltage, and acontrol electrode coupled to receive a column select pulse signalpulse_cs[x]. A transistor 221 has a first current carrying electrodecoupled to the control electrode of column selection transistor 218, asecond current carrying electrode coupled to receive the column selectpulse signal pulse_cs[x], and a control electrode coupled to receive abit line precharge signal blspq[x].

The sense amplifiers and write drivers circuitry 114 of the secondembodiment includes a transistor 232 having a first current carryingelectrode coupled to a read voltage regulator 233 for receiving a readvoltage, a second current carrying electrode coupled to a node 231, anda control electrode coupled to receive the signal enrd_lo[a]. Atransistor 234 has a first current carrying electrode coupled to a write0 voltage regulator 235 for receiving a write 0 voltage, a secondcurrent carrying electrode coupled to the node 231, and a controlelectrode coupled to receive the signal enwr0_lo[a]. A transistor 236has a first current carrying electrode coupled to a write 1 voltageregulator 237 for receiving a write 1 voltage, a second current carryingelectrode coupled to node 231, and a control electrode coupled toreceive the signal enwr1_hi_b[a].

The above portion of the sense amplifiers and write drivers circuitry114 is coupled to the source line 134 by a portion of the columnselection circuitry 106 including a column selection transistor 238having a first current carrying electrode coupled to the node 231 and asecond current carrying electrode coupled to source line 134. The columnselection transistor 238 preferably is a thin-oxide device with lowthreshold voltage for a higher current drive. A transistor 239 has afirst current carrying electrode coupled to receive a precharge voltagevbq, a second current carrying electrode coupled to source line 134 andthe second current carrying electrode of column selection transistor238, and a control electrode coupled to receive a bit line prechargesignal blspq[x]. A transistor 240 has a first current carrying electrodecoupled to the control electrode of column selection transistor 238, asecond current carrying electrode coupled to a reference voltage, and acontrol electrode coupled to receive a chip select pulse signalpulse_cs[x]. A transistor 241 has a first current carrying electrodecoupled to the control electrode of column selection transistor 238, asecond current carrying electrode coupled to a reference voltage, forexample, ground, and a control electrode coupled to receive a bit lineprecharge signal blspq[x]. A transistor 242 has a first current carryingelectrode coupled to receive a precharge voltage vbq, a second currentcarrying electrode coupled to the node 231, and a control electrodecoupled to the delayed bit line precharge signal dlyblspq.

The sense amplifiers and write drivers circuitry 112 of the secondembodiment further includes a transistor 252 having a first currentcarrying electrode coupled to a read voltage regulator 253 for receivinga read voltage, a second current carrying electrode coupled to a node251, and a control electrode coupled to receive the signal enrd_lo[b]. Atransistor 254 has a first current carrying electrode coupled to a write0 voltage regulator 255 for receiving a write 0 voltage, a secondcurrent carrying electrode coupled to the node 251, and a controlelectrode coupled to receive the signal enwr0_lo[b]. A transistor 256has a first current carrying electrode coupled to a write 1 voltageregulator 257 for receiving a write 1 voltage, a second current carryingelectrode coupled to node 251, and a control electrode coupled toreceive the signal enwr1_hi_b[b].

The above portion of the sense amplifiers and write drivers 112 iscoupled to the source line 135 by a portion of the column selectioncircuitry 104 including a column selection transistor 258 having a firstcurrent carrying electrode coupled to the node 251 and a second currentcarrying electrode coupled to source line 135. The column selectiontransistor 258 preferably is a thin-oxide device with low thresholdvoltage for a higher current drive. A transistor 259 has a first currentcarrying electrode coupled to receive a precharge voltage vbq, a secondcurrent carrying electrode coupled to node 251, and a control electrodecoupled to receive a delayed bit line precharge signal dlyblspq. Atransistor 260 has a first current carrying electrode coupled to thecontrol electrode of column selection transistor 258, a second currentcarrying electrode coupled to a reference voltage, and a controlelectrode coupled to receive a column select pulse signal pulse_cs[y]. Atransistor 261 has a first current carrying electrode coupled to thecontrol electrode of column selection transistor 258, a second currentcarrying electrode coupled to a reference, for example, ground, and acontrol electrode coupled to receive a bit line precharge signalblspq[y]. A transistor 262 has a first current carrying electrodecoupled to the precharge voltage vbq, a second current carryingelectrode coupled to the source line 135, and a control electrodecoupled to receive the bit line precharge voltage blspq[y].

The sense amplifiers and write drivers circuitry 114 of the secondembodiment further includes a transistor 272 having a first currentcarrying electrode coupled to a read voltage regulator 273 for receivinga read voltage, a second current carrying electrode coupled to a node271, and a control electrode coupled to receive the signal enrd_lo[b]. Atransistor 274 has a first current carrying electrode coupled to a write0 voltage regulator 275 for receiving a write 0 voltage, a secondcurrent carrying electrode coupled to the node 271, and a controlelectrode coupled to receive the signal enwr0_lo[b]. A transistor 276has a first current carrying electrode coupled to a write 1 voltageregulator 277 for receiving a write 1 voltage, a second current carryingelectrode coupled to node 271, and a control electrode coupled toreceive the signal enwr1_hi_b[b].

The above portion of the sense amplifiers and write drivers circuitry114 is coupled to the source line 135 by a portion of the columnselection circuitry 106 including a column selection transistor 278having a first current carrying electrode coupled to the node 271 and asecond current carrying electrode coupled to source line 135. The columnselection transistor 278 preferably is a thin-oxide device with lowthreshold voltage for a higher current drive. A transistor 280 has afirst current carrying electrode coupled to the control electrode ofcolumn selection transistor 278, a second current carrying electrodecoupled to a reference voltage, and a control electrode coupled toreceive a column select pulse signal pulse_cs[y]. A transistor 281 has afirst current carrying electrode coupled to the control electrode ofcolumn selection transistor 278, a second current carrying electrodecoupled to receive a column select pulse voltage pulse_cs[y], and acontrol electrode coupled to receive a bit line precharge signalblspq[y]. A transistor 282 has a first current carrying electrodecoupled to receive a precharge voltage vbq, a second current carryingelectrode coupled to the node 271, and a control electrode coupled tothe delayed bit line precharge signal dlyblspq.

Referring to FIG. 2C, NAND gates 301, 302, 303 each have a first inputcoupled to receive the first data input signal din[a], and a secondinput coupled to receive a bit line enable read signal enrd_bl, a bitline enable write 0 signal enwr0_bl, and a bit line enable write 1signal enwr1_bl, respectively. An inverter 304 has an input coupled toreceive an output of the NAND gate 301 and provides a first enable readhigh signal enrd_hi[a]. An inverter 305 has an input coupled to receivean output of the NAND gate 303 and provides a first enable write 1 lowsignal enwr1_lo[a]. An output of the NAND gate 302 provides a firstenable write 0 high signal enwr0_hi_b[a].

NAND gates 306, 307, 308 each have a first input coupled to receive thesecond data input signal din[b], and a second input coupled to receivethe bit line enable read signal enrd_bl, the bit line enable write 0signal enwr0_bl, and the bit line enable write 1 signal enwr1_bl,respectively. An inverter 309 has an input coupled to receive an outputof the NAND gate 306 and provides a second enable read high signalenrd_hi[b]. An inverter 310 has an input coupled to receive an output ofthe NAND gate 308 and provides a second enable write 1 low signalenwr1_lo[b]. An output of the NAND gate 307 provides a second enablewrite 0 high signal enwr0_hi_b[b].

The sense amplifiers and write drivers circuitry 112 (FIG. 2D) of thesecond embodiment further includes a transistor 312 having a firstcurrent carrying electrode coupled to a read voltage regulator 313 forreceiving a read voltage, a second current carrying electrode coupled toa node 311, and a control electrode coupled to receive the signalenrd_hi[a]. A transistor 314 has a first current carrying electrodecoupled to a write 0 voltage regulator 315 for receiving a write 0voltage, a second current carrying electrode coupled to the node 311,and a control electrode coupled to receive the signal enwr0_hi_b[a]. Atransistor 316 has a first current carrying electrode coupled to a write1 voltage regulator 317 for receiving a write 1 voltage, a secondcurrent carrying electrode coupled to node 311, and a control electrodecoupled to receive the signal enwr1_lo[a].

The above portion of the sense amplifiers and write drivers 112 iscoupled to the bit line 132 by a portion of the column selectioncircuitry 104 including a column selection transistor 318 having a firstcurrent carrying electrode coupled to the node 311 and a second currentcarrying electrode coupled to bit line 132. The column selectiontransistor 318 preferably is a thin-oxide device with low thresholdvoltage for a higher current drive. A transistor 319 has a first currentcarrying electrode coupled to receive a precharge voltage vbq, a secondcurrent carrying electrode coupled to node 311, and a control electrodecoupled to receive a delayed bit line precharge signal dlyblspq. Atransistor 320 has a first current carrying electrode coupled to thecontrol electrode of column selection transistor 318, a second currentcarrying electrode coupled to a reference voltage, and a controlelectrode coupled to receive a column select pulse signal pulse_cs[x]. Atransistor 321 has a first current carrying electrode coupled to thecontrol electrode of column selection transistor 318, a second currentcarrying electrode coupled to a reference voltage, for example, ground,and a control electrode coupled to receive a bit line precharge signalblspq[x]. A transistor 322 has a first current carrying electrodecoupled to receive a precharge voltage vbq, a second current carryingelectrode coupled to the bit line 132, and a control electrode coupledto the bit line precharge signal blspq[x].

The sense amplifiers and write drivers circuitry 114 of the secondembodiment further includes a transistor 372 having a first currentcarrying electrode coupled to a read voltage regulator 373 for receivinga read voltage, a second current carrying electrode coupled to a node371, and a control electrode coupled to receive the signal enrd_hi[b]. Atransistor 374 has a first current carrying electrode coupled to a write0 voltage regulator 375 for receiving a write 0 voltage, a secondcurrent carrying electrode coupled to the node 371, and a controlelectrode coupled to receive the signal enwr0_hi_b[b]. A transistor 376has a first current carrying electrode coupled to a write 1 voltageregulator 377 for receiving a write 1 voltage, a second current carryingelectrode coupled to node 371, and a control electrode coupled toreceive the signal enwr1_lo[b].

The above portion of the sense amplifiers and write drivers circuitry114 is coupled to the bit line 133 by a portion of the column selectioncircuitry 106 including a column selection transistor 378 having a firstcurrent carrying electrode coupled to the node 371 and a second currentcarrying electrode coupled to bit line 133. The column selectiontransistor 378 preferably is a thin-oxide device with low thresholdvoltage for a higher current drive. A transistor 380 has a first currentcarrying electrode coupled to the control electrode of column selectiontransistor 378, a second current carrying electrode coupled to areference voltage, and a control electrode coupled to receive the columnselect pulse signal pulse_cs[y]. A transistor 381 has a first currentcarrying electrode coupled to the control electrode of column selectiontransistor 378, a second current carrying electrode coupled to areference voltage, for example, ground, and a control electrode coupledto receive a bit line precharge signal blspq[y]. A transistor 382 has afirst current carrying electrode coupled to receive a precharge voltagevbq, a second current carrying electrode coupled to the node 371, and acontrol electrode coupled to the delayed bit line precharge signaldlyblspq. A transistor 379 has a first current carrying electrodecoupled to receive a precharge voltage vbq, a second current carryingelectrode coupled to the bit line 133, and a control electrode coupledto the bit line precharge signal blspq[y].

FIGS. 3, 4, and 5 are timing diagrams (signal state versus time) for aportion of the signals of the second embodiment, including timingwaveforms for reading the state of a cell (FIG. 3), timing waveforms forwriting a 0 or low state to a cell (FIG. 4), and timing waveforms forwriting a 1 or high state to a cell (FIG. 5). FIGS. 3, 4, and 5 indicatesignal states as HI (high) being a high voltage and LO (low) beingground or any voltage lower than the high voltage. Furthermore, thesignal state HI may comprise multiple high voltage levels at differenttimes.

In operation, when the ST-MRAM 100 is powered up and not performing reador write operations, the portion of the signals illustrated in FIGS. 3,4, and 5 are at states according to time t1 in any of FIGS. 3, 4, and 5.The bit line precharge signal blspq[x] is high which (a) enablestransistor 239 that pulls source line 134 to precharge voltage vbq, and(b) enables transistor 322 that pulls bit line 132 to precharge voltagevbq. While not shown in FIGS. 3, 4, and 5, the bit line precharge signalblspq[y] is high as well at time t1 which (a) enables transistor 262that pulls source line 135 to precharge voltage vbq, and (b) enablestransistor 379 that pulls bit line 133 to precharge voltage vbq. Thus,source line 134, 135 and bit line 132, 133 are pulled to a prechargevoltage vbq from one end. The high states of blspq[x] and blspq[y] atthe same time disables the column selection transistors 218, 238, 318,and columns selection transistors 258, 278, and 378, respectively, bypulling their control electrodes to a low voltage, for example, ground.During this time, the column select pulse signals pulse_cs[x] (shown inFIGS. 3, 4, and 5) and pulse_cs[y] are low. Therefore, none of the bitlines 132, 133, and source lines 134, 135 is selected as the columnselection transistors are disabled. The delayed bit line prechargesignal dlyblspq is high enabling transistors 219, 242, 259, 282, 319,and 382 to apply the precharge voltage vbq to nodes 211, 231, 251, 271,311, and 371, respectively. Both current carrying electrodes of thecolumn selection transistors are thus held at the precharge voltage vbq.While not shown in FIGS. 3, 4, and 5, all the word line 136 may be at alow voltage or ground to ensure none of the word line select transistors130 is enabled at time t1 when the ST-MRAM 100 is powered up and notperforming read or write operations.

Referring to FIG. 3, blspq[x] is set to low and pulse_cs[x] is set tohigh to initiate a column selection at time t2 for a read operation. Theblspq[x] signal low disconnects the source line 134 and bit line 132from the vbq precharge voltage causing the source line 134 and bit line132 to float and disables the pull-down at the control electrodes of thecolumn selection transistors connected to source line 134 and bit line132. The pulse_cs[x] signal high connects the control electrodes ofcolumn selection transistors 218, 238, and 318 to a reference voltagethrough transistors 220, 240, and 320, respectively. At time t3 which isafter a delay of td1 from t2, the pulse_cs[x] signal is set to lowcausing the control electrodes of column selection transistors 218, 238,and 318 to float. The delayed bit line precharge signal dlyblspq is alsoset to low at time t3 to disable transistors 219, 242, 259, 282, 319,and 382 which in turn floats nodes 211, 231, 251, 271, 311, and 371,respectively. The above sequence selects source line 134 and bit line132 by disconnecting them from the precharge voltage vbq and by floatingthe control electrodes of column selection transistors 218 and 238,corresponding to source line 134, and column selection transistor 318,corresponding to bit line 132, after precharging the control electrodesof the column selection transistors to a reference voltage. While notshown in FIG. 3, one of the word line 136 is set to high during any timebetween t1 and t3 to select a row of word line select transistors 130 inthe bit cell array 102.

Subsequently at time t4, the bit line enable read signal enrd_bl is setto high which enables transistor 312 through NAND gate 301 and inverter304 when din[a] is high. The read voltage regulator 313 applies a highvoltage (pull-up) to bit line 132 through transistors 312 and 318. Theread voltage regulator 313 may comprise an NMOS source follower circuitfurther comprising at least an NMOS-follower transistor. At time t5which is after a delay of td2 from t4, the source line enable readsignal enrd_sl is set to high. The signal enrd_sl high enablestransistors 212 and 232 through NAND gate 201 and inverter 204 whendin[a] is high. The read voltage regulators 213 and 233 apply a lowvoltage (pull-down) to source line 134 through transistor pairs 212 and218, and 232 and 238, respectively. Each of the read voltage regulators213 and 233 may comprise a PMOS source follower circuit furthercomprising of a PMOS-follower transistor. The delay td2 can a fixeddelay or a programmable delay programmed by writing to a register. Notethat the delay td2 causes the high voltage application to bit line 132to initiate earlier than the low voltage application to source line 134during a read operation. At time t6, both enrd_bl and enrd_sl are set tolow to stop the application of read voltages at the source line 134 andbit line 132. The blspq[x] and dlyblspq are set to high to disable theassociated column selection transistors and precharge the source line134 and bit line 132 to voltage vbq. While not shown in FIG. 3, thesignals transitioning at time t6 may transition in any order and withany delay between each other. Furthermore, the selected word line 136may be set to low at time t6 (not shown). During the read operation fromthe selected source line 134 and bit line 132, the unselected sourceline 135 and bit line 133 are maintained at the precharge voltage levelvbq by transistors 262 and 379, respectively.

Referring to FIG. 4, blspq[x] is set to low and pulse_cs[x] is set tohigh to initiate a column selection at time t2 for a write 0 operation.The shown sequence of signals blspq[x], dlyblspq, and pulse_cs[x] untiltime t3 is the same as in that of a read operation (FIG. 3) describedearlier to select source line 134 and bit line 132. While not shown inFIG. 4, one of the word line 136 is set to high during any time betweent1 and t3 to select a row of word line select transistors 130 in the bitcell array 102. The magnitude of the voltage level of the selected wordline 136 during a write 0 operation is determined by the magnitude ofthe voltages applied to source line 134 and bit line 132 during a write0 operation, and configured to achieve the maximum voltage allowed, fore.g. 1.65V, across the control electrode and any one of the currentcarrying electrodes for maintaining reliable operation of the word lineselect transistor 130. The maximum voltage allowed can be estimatedbased on a desired lifetime for time dependent dielectric breakdown ofthe word line select transistors 130 connected to the selected word line136. The high voltage levels of the selected word line 136 during write0 and read operations may be the same voltage level.

Subsequently at time t4, the bit line enable write 0 signal enwr0_bl isset to high which enables transistor 314 through NAND gate 302 whendin[a] is high. The write 0 voltage regulator 315 applies a high voltage(pull-up) to bit line 132 through transistors 314 and 318. The write 0voltage regulator 315 may comprise an NMOS source follower circuitfurther comprising of an NMOS-follower transistor. At time t5 which isafter the delay of td2 from t4, the source line enable write 0 signalenwr0_sl is set to high. The enwr0_sl high enables transistors 214 and234 through NAND gate 202 and inverter 205 when din[a] is high. Thewrite 0 voltage regulators 215 and 235 apply a low voltage (pull-down)to source line 134 through transistor pairs 214 and 218, and 234 and238, respectively. Each of the write 0 voltage regulators 215 and 235may comprise a PMOS source follower circuit further comprising aPMOS-follower transistor. Note that the delay td2 causes the highvoltage application to bit line 132 to initiate earlier than the lowvoltage application to source line 134 during a write 0 operation. Attime t6, both signals enwr0_bl and enwr0_sl are set to low to stop theapplication of write 0 voltages at the source line 134 and bit line 132.The signals blspq[x] and dlyblspq are set to high to disable theassociated column selection transistors and precharge the source line134 and bit line 132 to voltage vbq. While not shown in FIG. 4, thesignals transitioning at time t6 may transition in any order and withany delay between each other. Furthermore, the selected word line 136may be set to low at time t6 (not shown). During the write 0 operationfrom the selected source line 134 and bit line 132, the unselectedsource line 135 and bit line 133 are maintained at the precharge voltagelevel vbq by transistors 262 and 379, respectively.

Referring to FIG. 5, blspq[x] is set to low and pulse_cs[x] is set tohigh to initiate a column selection at time t2 for a write 1 operation.The shown sequence of signals blspq[x], dlyblspq, and pulse_cs[x] untiltime t3 is the same as in that of a read operation (FIG. 3) describedearlier to select source line 134 and bit line 132. While not shown inFIG. 5, one of the word line 136 is set to high during any time betweent1 and t3 to select a row of word line select transistors 130 in the bitcell array 102. Furthermore, the high voltage level of the selected wordline 136 during a write 1 operation may be different than the highvoltage level of the selected word line 136 during a write 0 or readoperation. The magnitude of the voltage level of the selected word line136 during a write 1 operation is determined by the magnitude of thevoltages applied to source line 134 and bit line 132 during a write 1operation, and configured to achieve the maximum voltage allowed, fore.g. 1.65V, across the control electrode and any one of the currentcarrying electrodes for maintaining reliable operation of the word lineselect transistor 130. The maximum voltage allowed can be estimatedbased on a desired lifetime for time dependent dielectric breakdown ofthe word line select transistors 130 connected to the selected word line136.

Subsequently at time t4, the source line enable write 1 signal enwr1_slis set to high which enables transistors 216 and 236 through NAND gate203 when din[a] is high. The write 1 voltage regulators 217 and 237apply a high voltage (pull-up) to source line 134 through transistorpairs 216 and 218, and 236 and 238, respectively. Each of the write 1voltage regulators 217 and 237 may comprise an NMOS source followercircuit further comprising an NMOS-follower transistor. At time t5 whichis after the delay of td2 from t4, the bit line enable write 1 signalenwr1_bl is set to high. The signal enwr1_bl high enables transistor 316through NAND gate 303 and inverter 305 when din[a] is high. The write 1voltage regulator 317 applies a low voltage (pull-down) to bit line 132through transistor 316 and 318. The write 1 voltage regulator 317 maycomprise a PMOS source follower circuit further comprising aPMOS-follower transistor. Note that the delay td2 causes the highvoltage application to source line 134 to initiate earlier than the lowvoltage application to bit line 132 during a write 1 operation. At timet6, both signals enwr1_sl and enwr1_bl are set to low to stop theapplication of write 1 voltages at the source line 134 and bit line 132.The signals blspq[x] and dlyblspq are set to high to disable theassociated column selection transistors and precharge the source line134 and bit line 132 to voltage vbq. While not shown in FIG. 5, thesignals transitioning at time t6 may transition in any order and withany delay between each other. Furthermore, the selected word line 136may be set to low at time t6 (not shown). During the write 1 operationfrom the selected source line 134 and bit line 132, the unselectedsource line 135 and bit line 133 are maintained at the precharge voltagelevel vbq by transistors 262 and 379, respectively. The magnitude of theprecharge voltage level vbq is determined by the highest magnitude ofthe selected word line 136 when set to high during write 1, write 0, andread operations, and configured to achieve the maximum voltage allowed,for e.g. 1.65V, across the control electrode and any one of the currentcarrying electrodes for maintaining reliable operation of the word lineselect transistor 130 in the unselected source line 135 and bit line133.

FIGS. 6 and 7 are flow charts that illustrate exemplary embodiments ofmethods 600, 700 of reading and writing to a spin-torque MRAM. Thevarious tasks performed in connection with methods 600, 700 may beperformed by hardware, firmware, or any combination thereof. Forillustrative purposes, the description of methods 600, 700 refer toelements mentioned above in connection with FIGS. 1 and 2. It should beappreciated that methods 600, 700 may include any number of additionalor alternative tasks, the tasks shown in FIGS. 3, and 5 need not beperformed in the illustrated order, and methods 600, 700 may beincorporated into a more comprehensive procedure or method havingadditional functionality not described in detail herein. Moreover, oneor more of the tasks shown in FIGS. 6 and 7 could be omitted from anembodiment of the methods 600, 700 as long as the intended overallfunctionality remains intact.

Referring to FIG. 6, a method of the first exemplary embodiment includeswriting to and reading from a spin-torque MRAM having a first sourceline, a second source line, a first bit line, a second bit line, a firstplurality of magnetic tunnel junction cells coupled between the firstsource line and the first bit line, and a second plurality of magnetictunnel junction cells coupled between the second source line and thesecond bit line, comprising applying 602 a first voltage to the firstsource line or the first bit line; and subsequently applying 604 asecond voltage to the other of the first source line or the first bitline from which the first voltage is applied.

A method (see FIG. 7) in accordance with the second exemplary embodimentincludes method for writing to and reading from a spin-torque MRAMhaving a first source line, a second source line, a first bit line, asecond bit line, each of a first plurality of magnetic tunnel junctioncells coupled in series with one each of a plurality of word line selecttransistors between the first source line and the first bit line, and asecond plurality of magnetic tunnel junction cells coupled in serieswith one each of a second plurality of word line select transistorsbetween the second source line and the second bit line, comprisingapplying 702 a first voltage at each of the first source line, first bitline, second source line, and second bit line; applying 704 a word linevoltage to one word line select transistor of each first and secondpluralities of word line select transistors; isolating 706 the firstsource line and first bit line from the first voltage; applying 708 asecond voltage at one of the first bit line or first source line;applying 710 a third voltage at the other of the first bit line or firstsource line at which the second voltage is applied; isolating 712 thethird voltage from the first bit line or first source line at which itwas applied; isolating 714 the second voltage from the first bit line orfirst source line at which it was applied; and reapplying 716 the firstvoltage at each of the first source line and second source line.

In summary, an ST-MRAM array comprises of a plurality of Magnetic tunnelJunctions, each coupled to a transistor connected to each of a pluralityof source lines and bit lines. All the bit lines and source lines areelevated to a higher (than ground) voltage, vbq, during power up and insteady state. During a read or write operation, only the selected (anaddressed subset of all) bit line and source lines are pulled-down to alow voltage and/or pulled-up to a high voltage depending on theoperation (write 0, write 1, and read) being performed. The unselectedbit lines and source lines are held at the vbq voltage level. Note thatnone of the bit lines and source lines is pulled down to zero or groundvoltage level during read or write operation. The bit lines and sourcelines voltage levels are higher than that of a ground or zero voltagelevel. The precharge voltage vbq voltage level is about 600 millivolts.

Separately timed switch control signals and a logic circuit are used forpull-up or pull-down of the selected bit lines and source lines duringread and write operations. A method of operation further includesdelaying pull-down timing from pull-up timing by a fixed or programmabledelay. During power-up and steady state, all the bit lines and sourcelines are precharged to vbq level with a precharge transistor on eachside (current carrying electrodes) of the column selection transistor ineach bit line and source line. In response to a read or write operation,the vbq precharge transistor of the selected column at the bitline/source line side of the column selection transistor is disabledfirst. Subsequently (by a fixed or programmable delay) the vbq prechargetransistor at the opposite side of the selected column selectiontransistor is disabled. Column selection transistors are placed at boththe top and bottom sides of the array.

Benefits, other advantages, and solutions to problems have beendescribed above with regard to specific embodiments. However, thebenefits, advantages, solutions to problems, and any element(s) that maycause any benefit, advantage, or solution to occur or become morepronounced are not to be construed as a critical, required, or essentialfeature or element of any or all the claims. As used herein, the terms“comprises,” “comprising,” or any other variation thereof, are intendedto cover a non-exclusive inclusion, such that a process, method,article, or apparatus that comprises a list of elements does not includeonly those elements but may include other elements not expressly listedor inherent to such process, method, article, or apparatus.

While at least one exemplary embodiment has been presented in theforegoing detailed description, it should be appreciated that a vastnumber of variations exist. It should also be appreciated that theexemplary embodiment or exemplary embodiments are only examples, and arenot intended to limit the scope, applicability, or configuration of theinvention in any way. Rather, the foregoing detailed description willprovide those skilled in the art with a convenient road map forimplementing an exemplary embodiment of the invention, it beingunderstood that various changes may be made in the function andarrangement of elements described in an exemplary embodiment withoutdeparting from the scope of the invention as set forth in the appendedclaims.

What is claimed is:
 1. A method of operation of a magnetoresistivememory that includes a plurality of magnetic bit cells, each magneticbit cell of the plurality of magnetic bit cells including a magnetictunnel junction coupled in series with a select transistor, the methodcomprising: pulling a first end of each magnetic bit cell of theplurality of magnetic bit cells to a precharge voltage; pulling a secondend of each magnetic bit cell of the plurality of magnetic bit cells tothe precharge voltage; and after pulling the first and second ends ofeach magnetic bit cell to the precharge voltage: applying a firstvoltage at the first end of a selected magnetic bit cell of theplurality of magnetic bit cells; setting a word line to a high voltagelevel, where the word line is coupled to the select transistor of theselected magnetic bit cell; delaying for a delay after applying thefirst voltage; and after delaying for the delay, applying a secondvoltage at the second end of the selected magnetic bit cell.
 2. Themethod of claim 1, wherein the delay is a fixed delay.
 3. The method ofclaim 1, wherein the delay is a programmable delay.
 4. The method ofclaim 3, further comprising: writing to a register to program theprogrammable delay.
 5. The method of claim 1, wherein each magnetic bitcell is selectively coupled between a corresponding bit line of aplurality of bit lines and a corresponding source line of a plurality ofsource lines, wherein pulling the first and second ends of each magneticbit cell to the precharge voltage further comprises pulling theplurality of bit lines and the plurality of source lines to theprecharge voltage.
 6. The method of claim 1, wherein the first end ofthe selected magnetic bit cell is coupled to a first common line,wherein the second end of the selected magnetic bit cell is coupled to asecond common line, and wherein pulling the first and second ends of theselected magnetic bit cell to the precharge voltage further comprisespulling the first common line and the second common line to theprecharge voltage.
 7. The method of claim 6, further comprising: afterpulling the first and second common lines to the precharge voltage andprior to applying the first voltage, disconnecting the first and secondcommon lines from the precharge voltage.
 8. The method of claim 7further comprises: while applying the first voltage, holding additionalcommon lines at the precharge voltage, wherein the additional commonlines are coupled to unselected magnetic bit cells of the plurality ofmagnetic bit cells.
 9. The method of claim 1, wherein applying the firstvoltage further comprises applying a high voltage, and wherein applyingthe second voltage further comprises applying a low voltage.
 10. Themethod of claim 1, wherein setting the word line to the high voltagelevel further comprises setting the word line to the high voltage levelusing a charge-pumped voltage.
 11. The method of claim 1, whereinsetting the word line to the high voltage level further comprisessetting the word line to a high voltage level having a magnitude basedon at least one of the first voltage and the second voltage.
 12. Themethod of claim 11, wherein the precharge voltage is based on themagnitude of the high voltage level of the word line.
 13. The method ofclaim 1 further comprising generating separately timed switch controlsignals, wherein the separately timed switch control signals are used inapplying the first and second voltages.
 14. A method of operation of amagnetoresistive memory, wherein the magnetoresistive memory includes afirst magnetoresistive bit cell and a second magnetoresistive bit cell,each of the first and second magnetoresistive bit cells including amagnetic tunnel junction coupled in series with a correspondingselection transistor, the method comprising: pulling a first end of thefirst magnetoresistive bit cell to a precharge voltage; pulling a secondend of the first magnetoresistive bit cell to the precharge voltage;pulling a first end of the second magnetoresistive bit cell to theprecharge voltage; pulling a second end of the second magnetoresistivebit cell to the precharge voltage; and after pulling the first andsecond ends of the first magnetoresistive bit cell to the prechargevoltage: applying a word line voltage to the selection transistor of thefirst magnetoresistive bit cell; applying a first voltage to the firstend of the first magnetoresistive bit cell, wherein timing of applyingthe first voltage is based on a first control signal; and after applyingthe first voltage, applying a second voltage to the second end of thefirst magnetoresistive bit cell, wherein the first voltage is greaterthan the second voltage, and wherein timing of applying the secondvoltage is based on a second control signal.
 15. The method of claim 14,further comprises disconnecting the first and second ends of the firstmagnetoresistive bit cell from the precharge voltage before applying thefirst voltage.
 16. The method of claim 14, wherein applying the wordline voltage further comprises applying a word line voltage having amagnitude based on at least one of the first voltage and the secondvoltage.
 17. The method of claim 14, wherein the precharge voltage isbased on a magnitude of the word line voltage.
 18. A method of operationof a magnetoresistive memory, wherein the magnetoresistive memoryincludes a first magnetoresistive bit cell and a second magnetoresistivebit cell, each of the first and second magnetoresistive bit cellsincluding a magnetic tunnel junction coupled in series with acorresponding selection transistor, the method comprising: pulling afirst end of the first magnetoresistive bit cell to a precharge voltage;pulling a second end of the first magnetoresistive bit cell to theprecharge voltage; pulling a first end of the second magnetoresistivebit cell to the precharge voltage; pulling a second end of the secondmagnetoresistive bit cell to the precharge voltage; disconnecting thefirst and second ends of the first magnetoresistive bit cell from theprecharge voltage; and after disconnecting, and while maintaining thefirst and second ends of the second magnetoresistive bit cell at theprecharge voltage: applying a word line voltage to the selectiontransistor of the first magnetoresistive bit cell, wherein magnitude ofthe word line voltage is based on a first voltage and a second voltage;applying the first voltage to the first end of the firstmagnetoresistive bit cell; and applying the second voltage to the secondend of the first magnetoresistive bit cell, wherein the first voltage isgreater than the second voltage, and wherein timing of applying thesecond voltage is delayed from timing of applying the first voltage. 19.The method of claim 18, wherein the precharge voltage is based on themagnitude of the word line voltage.
 20. The method of claim 18, whereinapplying the first voltage further comprises applying the first voltageat both ends of a common line coupled to the first end of the firstmagnetoresistive bit cell.